SSM3J46CTB(TPL3)
MOSFET P-CH 20V 2A CST3BManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the SSM3J46CTB-TPL3, a P-channel MOSFET from the U-MOSVI series. This surface-mount device, supplied in a CST3B package, features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C (Ta). The on-resistance (Rds On) is rated at a maximum of 103mOhm at 1.5A and 4.5V Vgs. Gate charge (Qg) is 4.7 nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 290 pF maximum at 10V Vds. Drive voltage ranges from 1.5V to 4.5V, and the maximum gate-source voltage is ±8V. This component operates up to a junction temperature of 150°C. It is commonly utilized in power management and switching applications across various industries.
Additional Information
Series: U-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | CST3B |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
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