SSM3J321T(TE85L,F)
MOSFET P-CH 20V 5.2A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part of the U-MOSV series, the SSM3J321T-TE85L-F- is a 20V device with a continuous drain current capability of 5.2A (Ta). It features a low on-resistance of 46mOhm at 3A and 4.5V, with a drive voltage range of 1.5V to 4.5V. This surface mount component, packaged in a TSM (TO-236-3, SC-59, SOT-23-3) configuration, operates up to 150°C (TJ) and has a maximum power dissipation of 700mW (Ta). Key electrical characteristics include a gate charge of 8.1 nC at 4.5V and an input capacitance of 640 pF at 10V. Its specifications make it suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: U-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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