SSM3J307T(TE85L,F)
MOSFET P-CH 20V 5A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J307T-TE85L-F- is a P-Channel MOSFET from the U-MOSV series. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 5A at 25°C. The Rds On is specified at a maximum of 31mOhm at 4A, 4.5V, with drive voltages ranging from 1.5V to 4.5V. The device has a maximum power dissipation of 700mW and an operating temperature of 150°C. Key parameters include a Gate Charge (Qg) of 19 nC at 4.5V and an Input Capacitance (Ciss) of 1170 pF at 10V. It is housed in a TSM package (TO-236-3, SC-59, SOT-23-3) and supplied on tape and reel. This MOSFET is suitable for applications in consumer electronics and industrial control systems requiring efficient power switching.
Additional Information
Series: U-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 10 V |
Request a Quote
Clients Also Buy
SSM3J129TU(TE85L)
MOSFET P-CH 20V 4.6A UFM
SSM3J321T(TE85L,F)
MOSFET P-CH 20V 5.2A TSM
TPC6111(TE85L,F,M)
MOSFET P-CH 20V 5.5A VS-6
