SSM3J306T(TE85L,F)
MOSFET P-CH 30V 2.4A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage offers the SSM3J306T-TE85L-F-, a P-Channel MOSFET designed for surface-mount applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.4 A at 25°C. The Rds On is a maximum of 117 mOhm at 1 A and 10 V drive voltage, with a specified drive voltage range of 4 V to 10 V. The maximum power dissipation is 700 mW (Ta), and the device operates at junction temperatures up to 150°C. Key electrical parameters include a gate charge (Qg) of 2.5 nC at 15 V and input capacitance (Ciss) of 280 pF at 15 V. It is supplied in a TSM (TO-236-3, SC-59, SOT-23-3) package on tape and reel. This component is suitable for use in automotive and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V |
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