SSM3J304T(TE85L,F)
MOSFET P-CH 20V 2.3A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J304T-TE85L-F- is a P-Channel MOSFET from the U-MOSIII series. This surface mount component, packaged in a TSM (TO-236-3, SC-59, SOT-23-3), features a drain-to-source voltage (Vdss) of 20V. It offers a continuous drain current (Id) of 2.3A at 25°C with a maximum power dissipation of 700mW. The on-resistance (Rds On) is a maximum of 127mOhm at 1A and 4V, with drive voltages ranging from 1.8V to 4V. Key parameters include a maximum gate charge (Qg) of 6.1 nC at 4V and a maximum input capacitance (Ciss) of 335 pF at 10V. Operating temperature is rated up to 150°C (TJ). This device is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 127mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF @ 10 V |
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