SSM3J168F,LXHF
SMOS LOW RON VDS:-60V VGSS:+10/-Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 60 V 400mA (Ta) 600mW (Ta) Surface Mount S-Mini
Additional Information
Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 200mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | S-Mini |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | +10V, -20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
| Qualification | AEC-Q101 |
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