SSM3J15CT,L3F
SMALL LOW RON PCH MOSFETS VDSS:-Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number SSM3J15CT-L3F. This surface mount device features a 30 V drain-to-source voltage (Vdss) and a continuous drain current of 100 mA at 25°C (Ta). The maximum power dissipation is 100 mW (Ta). Key electrical parameters include a maximum Rds On of 12 Ohms at 10 mA and 4 Vgs, with drive voltages of 2.5V and 4V. Input capacitance (Ciss) is a maximum of 9.1 pF at 3 V. The SSM3J15CT-L3F operates within a temperature range of -55°C to 150°C and is supplied in a CST3 (SC-101, SOT-883) package on tape and reel. This component is suitable for various applications including portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Vgs(th) (Max) @ Id | 1.7V @ 100µA |
| Supplier Device Package | CST3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.1 pF @ 3 V |
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