SSM3J14TTE85LF
MOSFET P-CH 30V 2.7A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J14TTE85LF is a P-Channel MOSFET from the U-MOSII series, designed for efficient power switching. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current of 2.7A at 25°C. The Rds(on) is specified at a maximum of 85mOhm when conducting 1.35A with a 10V gate-to-source voltage (Vgs). Input capacitance (Ciss) is 413 pF at 15V. The SSM3J14TTE85LF is housed in a TSM (TO-236-3, SC-59, SOT-23-3) package, suitable for surface mount applications. It offers a maximum power dissipation of 700mW (Ta) and can operate at junction temperatures up to 150°C. This device is commonly utilized in consumer electronics and industrial automation applications requiring compact and reliable power management. The device is supplied in Tape & Reel packaging.
Additional Information
Series: U-MOSIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 413 pF @ 15 V |
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