SSM3J144TU,LXHF
SMOS P-CH VDSS:-20V VGSS:-8/+6VManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number SSM3J144TU-LXHF, is a U-MOSVI series device featuring a 20V Drain-Source Voltage (Vdss). This surface mount component, packaged in a UFM (3-SMD, Flat Leads) on Tape & Reel (TR), offers a continuous drain current of 3.2A (Ta) and a maximum power dissipation of 500mW (Ta). The device exhibits a maximum on-resistance of 93mOhm at 1.5A, 4.5V, with drive voltages ranging from 1.5V to 4.5V. Gate charge (Qg) is rated at 4.7 nC maximum at 4.5V, and input capacitance (Ciss) is 290 pF maximum at 10V. Operating up to 150°C, this AEC-Q101 qualified MOSFET is suitable for automotive applications.
Additional Information
Series: U-MOSVIRoHS Status: unknownManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 93mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFM |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | +6V, -8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 10 V |
| Qualification | AEC-Q101 |
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