SSM3J129TU(TE85L)
MOSFET P-CH 20V 4.6A UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J129TU-TE85L- is a P-Channel MOSFET from the U-MOSV series. This surface mount component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.6A at 25°C. With a maximum on-resistance (Rds On) of 46mOhm at 3A and 4.5V gate-source voltage, it offers efficient switching. The device has a power dissipation of 500mW (Ta) and an operating junction temperature of 150°C. Key parameters include a gate charge (Qg) of 8.1 nC at 4.5V and an input capacitance (Ciss) of 640pF at 10V. The SSM3J129TU-TE85L- is supplied in a UFM package on tape and reel, suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: U-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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