SSM3J118TU(TE85L)
MOSFET P-CH 30V 1.4A UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J118TU-TE85L- is a P-Channel MOSFET designed for efficient power switching applications. This U-MOSII series device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.4A at 25°C. The Rds On is specified at a maximum of 240mOhm when conducting 650mA with a 10V gate-to-source voltage (Vgs). With a maximum power dissipation of 500mW (Ta), it is suitable for surface mount applications utilizing the UFM package. Drive voltage ranges from 4V to 10V. Key parameters include an input capacitance (Ciss) of 137pF at 15V and an operating temperature range up to 150°C. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: U-MOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 650mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 137 pF @ 15 V |
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