SSM3J118TU,LF
PB-F SMALL LOW ON RESISTANCE PCHManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage’s SSM3J118TU-LF is a P-channel MOSFET designed for demanding applications. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 1.4A at 25°C ambient. The P-channel technology, coupled with its small UFM package, makes it suitable for compact power management solutions. Key performance characteristics include a maximum on-resistance of 240mOhm at 650mA and 10V gate-source drive, with a threshold voltage of 2.6V at 1mA. Input capacitance is rated at 137pF maximum at 15V drain-source voltage. With a maximum power dissipation of 500mW at 25°C ambient, and an operating temperature range up to 150°C, this surface mount component is utilized in various industrial and consumer electronics. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 650mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 137 pF @ 15 V |
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