SSM3J114TU(TE85L)
MOSFET P-CH 20V 1.8A UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number SSM3J114TU-TE85L-. This surface mount device offers a 20V drain-to-source voltage and a continuous drain current of 1.8A at 25°C, with a maximum power dissipation of 500mW. Key electrical characteristics include a maximum Rds(on) of 149mOhm at 600mA and 4V Vgs, an input capacitance (Ciss) of 331pF at 10V Vds, and a gate charge (Qg) of 7.7nC at 4V Vgs. The drive voltage range is between 1.5V and 4V. This MOSFET is suitable for applications requiring efficient switching and power control, commonly found in consumer electronics and industrial automation. It is supplied in a UFM package and presented on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 149mOhm @ 600mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 331 pF @ 10 V |
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