SSM3J112TU,LF
MOSFET P-CH 30V 1.1A UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3J112TU-LF is a P-Channel MOSFET designed for general-purpose switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.1A at 25°C. The Rds(On) is specified at a maximum of 390mOhm when conducting 500mA with a 10V gate-source voltage. It operates with gate drive voltages between 4V and 10V. The component offers a maximum power dissipation of 800mW (Ta) and an input capacitance (Ciss) of 86pF at 15V. The SSM3J112TU-LF is packaged in a UFM (3-SMD, Flat Leads) surface mount configuration and is supplied on tape and reel. It is suitable for use in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 86 pF @ 15 V |
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