SSM3J09FU,LF
MOSFET P-CH 30V 200MA USMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number SSM3J09FU-LF, offers a 30V drain-source breakdown voltage and a continuous drain current of 200mA at 25°C. This surface mount device, packaged in a USM (SC-70, SOT-323) format, features a maximum power dissipation of 150mW. The Rds On is specified at 2.7 Ohms maximum at 100mA and 10Vgs. Input capacitance (Ciss) is a maximum of 22pF at 5Vds. Operating temperature range extends to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 100mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Supplier Device Package | USM |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22 pF @ 5 V |