HN4K03JUTE85LF
MOSFET N-CH 20V 100MA USVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage HN4K03JUTE85LF is an N-Channel MOSFET designed for applications requiring precise control of current. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 100 mA at 25°C, with a maximum power dissipation of 200 mW (Ta). The HN4K03JUTE85LF offers a low on-resistance (Rds On) of 12 Ohms at 10 mA and a gate-source voltage (Vgs) of 2.5V for optimal switching. Its input capacitance (Ciss) is rated at a maximum of 8.5 pF at 3 V. This device is housed in a compact 5-SSOP package, suitable for surface mounting. The operating temperature range extends up to 150°C (TJ). This MOSFET finds utility in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 5-SSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Vgs (Max) | 10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.5 pF @ 3 V |
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