2SK3388(TE24L,Q)
MOSFET N-CH 250V 20A 4TFPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number 2SK3388-TE24L-Q. This device features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 20A at 25°C (Ta). The on-resistance (Rds On) is a maximum of 105mOhm at 10A and 10V gate-source voltage. With a gate charge (Qg) of 100nC at 10V and input capacitance (Ciss) of 4000pF at 10V, this MOSFET is designed for efficient switching. It offers 125W of power dissipation (Tc) and can operate at junction temperatures up to 150°C. The component is housed in a surface mount 4-TFP package (9.2x9.2), commonly known as SC-97, and is supplied on tape and reel. This MOSFET is suitable for applications in power supply units, motor control, and general-purpose power switching across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-97 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | 4-TFP (9.2x9.2) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |
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