2SK3342(TE16L1,NQ)
MOSFET N-CH 250V 4.5A PW-MOLDManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the 2SK3342-TE16L1-NQ-, a high-performance N-Channel MOSFET designed for demanding applications. This surface mount component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous drain current (Id) of 4.5A at 25°C. With a maximum power dissipation of 20W (Tc) and an Rds On of 1 Ohm at 2.5A and 10V, it offers efficient power handling. The device operates within a temperature range of 150°C (TJ) and is supplied in a TO-252-3, DPAK package, presented on tape and reel. Key parameters include a maximum Gate-to-Source Voltage (Vgs) of ±20V, a typical Gate Charge (Qg) of 10 nC at 10V, and Input Capacitance (Ciss) of 440 pF at 10V. This MOSFET is suitable for use in power supply units, motor control, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | PW-MOLD |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 10 V |
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