2SK3313(Q)
MOSFET N-CH 500V 12A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the 2SK3313-Q-, an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 12 A at 25°C. With a maximum power dissipation of 40 W (Tc), it is suitable for demanding power management tasks. The 2SK3313-Q- exhibits a low on-resistance (Rds On) of 620 mOhm at 6 A and 10 V, and a gate charge (Qg) of 45 nC at 10 V. Its gate threshold voltage (Vgs(th)) is 4 V at 1 mA, with a maximum gate-source voltage (Vgs(max)) of ±30 V. Packaged in a TO-220NIS case, this through-hole mounting device is utilized across various industries, including power supplies, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220NIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 10 V |
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