2SK3309(TE24L,Q)
MOSFET N-CH 450V 10A TO220SMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage offers the 2SK3309-TE24L-Q-, an N-Channel power MOSFET designed for high-voltage switching applications. This device features a 450 V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Ta). With a maximum on-resistance (Rds On) of 650mOhm at 5A and 10V, it provides efficient power handling with a maximum power dissipation of 65W (Tc). The MOSFET is housed in a TO-220SM package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 23 nC at 10V and an input capacitance (Ciss) of 920 pF at 10V. This component is commonly utilized in power supply units, lighting control, and motor driver circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220SM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 10 V |
Request a Quote
Clients Also Buy
TPHR7904PB,L1XHQ
MOSFET N-CH 40V 150A 8SOP
TK13A45D(STA4,Q,M)
MOSFET N-CH 450V 13A TO220SIS
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
