2SK3309(Q)
MOSFET N-CH 450V 10A TO220FLManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number 2SK3309-Q. This TO-220FL packaged device offers a drain-to-source voltage (Vdss) of 450V and a continuous drain current (Id) of 10A at 25°C (Ta). Key electrical parameters include a maximum on-resistance (Rds On) of 650mOhm at 5A and 10V, a gate charge (Qg) of 23 nC at 10V, and an input capacitance (Ciss) of 920 pF at 10V. The device supports a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 1mA. With a power dissipation of 65W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for applications in power supply and lighting control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 10 V |
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