2SK2995(F)
MOSFET N-CH 250V 30A TO3PISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage 2SK2995-F- is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 30 A at 25°C, with a maximum power dissipation of 90 W (Tc). The MOSFET exhibits a low on-resistance (Rds On) of 68 mOhm at 15 A and 10 V gate drive. Key parameters include an input capacitance (Ciss) of 5400 pF at 10 V and a gate charge (Qg) of 132 nC at 10 V. The device is housed in a TO-3P(N)IS package for through-hole mounting and operates reliably up to a junction temperature of 150°C. This MOSFET is suitable for use in power supply units, motor control, and general power switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-3P(N)IS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 10 V |
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