2SK2993(TE24L,Q)
MOSFET N-CH 250V 20A TO220SMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's 2SK2993-TE24L-Q- is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage of 250V and a continuous drain current of 20A at 25°C (Ta). With a maximum power dissipation of 100W (Tc), it is suitable for power management solutions. The Rds On is specified at a maximum of 105mOhm at 10A and 10V gate-source voltage. Key characteristics include an input capacitance (Ciss) of 4000 pF (max) at 10V, gate charge (Qg) of 100 nC (max) at 10V, and a gate-source voltage range of ±20V. The threshold voltage (Vgs(th)) is a maximum of 3.5V at 1mA. Packaged in a TO-220SM and supplied on tape and reel, this device is utilized in industrial power supplies and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-220SM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |
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