2SK2967(F)
MOSFET N-CH 250V 30A TO3PManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number 2SK2967-F-. This TO-3P(N) packaged device offers a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 30A at 25°C ambient. With a maximum power dissipation of 150W at 25°C case temperature, it features a low on-resistance (Rds On) of 68mOhm at 15A and 10V Vgs. The gate charge (Qg) is 132 nC maximum at 10V, and input capacitance (Ciss) is 5400 pF maximum at 10V Vds. This component is suitable for high-voltage switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 10 V |
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