2SK2963(TE12L,F)
MOSFET N-CH 100V 1A PW-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's 2SK2963-TE12L-F- is an N-Channel Power MOSFET designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 700mOhm at 500mA and 10V Vgs. With a maximum power dissipation of 500mW (Ta), it is suitable for thermal management in compact designs. The PW-MINI package, also known as TO-243AA, is supplied on tape and reel for automated assembly. Key parameters include a Gate Charge (Qg) of 6.3 nC and input capacitance (Ciss) of 140 pF, both measured at 10V. This MOSFET is utilized in various industrial and consumer electronics applications where efficient switching and power management are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PW-MINI |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 10 V |
Request a Quote
Clients Also Buy
TPHR7904PB,L1XHQ
MOSFET N-CH 40V 150A 8SOP
TK13A45D(STA4,Q,M)
MOSFET N-CH 450V 13A TO220SIS
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
