2SK2917(F)
MOSFET N-CH 500V 18A TO3PISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage 2SK2917-F- is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 18A at 25°C (Ta), with a maximum power dissipation of 90W (Tc). The on-resistance (Rds On) is specified at 270mOhm maximum at 10A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 80 nC maximum at 10V and input capacitance (Ciss) of 3720 pF maximum at 10V. The MOSFET is housed in a TO-3P(N)IS (TO-3P-3, SC-65-3) through-hole package and operates up to 150°C (TJ). This component is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3P(N)IS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 10 V |
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