2SK2916(F)
MOSFET N-CH 500V 14A TO3PISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage 2SK2916-F- is an N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 14A at 25°C (Ta). The device offers a maximum power dissipation (Pd) of 80W (Tc) and a low on-resistance (Rds On) of 400mOhm at 7A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 58 nC at 10V and an input capacitance (Ciss) of 2600 pF at 10V. The TO-3P(N)IS package is suitable for robust thermal management. This MOSFET is utilized in industrial power supplies, power factor correction circuits, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3P(N)IS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V |
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