2SK2035(T5L,F,T)
MOSFET N-CH 20V 100MA SSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number 2SK2035-T5L-F-T-. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 100mA at 25°C. The on-resistance (Rds On) is a maximum of 12 Ohms at 10mA and 2.5V gate-source voltage. The input capacitance (Ciss) is rated at a maximum of 8.5 pF at 3V. This surface mount component is housed in an SC-75, SOT-416 package, designated as SSM by the supplier. With a maximum power dissipation of 100mW (Ta) and an operating junction temperature of 150°C, the 2SK2035 is suitable for applications in consumer electronics and various portable devices. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SSM |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Vgs (Max) | 10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.5 pF @ 3 V |
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