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2SK2035(T5L,F,T)

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2SK2035(T5L,F,T)

MOSFET N-CH 20V 100MA SSM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage N-Channel Power MOSFET, part number 2SK2035-T5L-F-T-. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 100mA at 25°C. The on-resistance (Rds On) is a maximum of 12 Ohms at 10mA and 2.5V gate-source voltage. The input capacitance (Ciss) is rated at a maximum of 8.5 pF at 3V. This surface mount component is housed in an SC-75, SOT-416 package, designated as SSM by the supplier. With a maximum power dissipation of 100mW (Ta) and an operating junction temperature of 150°C, the 2SK2035 is suitable for applications in consumer electronics and various portable devices. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs12Ohm @ 10mA, 2.5V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSSM
Drive Voltage (Max Rds On, Min Rds On)2.5V
Vgs (Max)10V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds8.5 pF @ 3 V

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