2SK1828TE85LF
MOSFET N-CH 20V 50MA SC59Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage N-Channel MOSFET, part number 2SK1828TE85LF, is a surface-mount device in an SC-59 package. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 50mA at 25°C. The Rds On is specified at 40 Ohms maximum at 10mA and 2.5V Vgs, with a gate-source threshold voltage (Vgs(th)) of 1.5V maximum at 100µA. Input capacitance (Ciss) is a maximum of 5.5 pF at 3V. The device offers a maximum power dissipation of 200mW at 25°C and an operating junction temperature of 150°C. This MOSFET is suitable for applications in consumer electronics and general-purpose switching. The component is supplied in a Digi-Reel® package.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50mA (Ta) |
| Rds On (Max) @ Id, Vgs | 40Ohm @ 10mA, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | SC-59 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Vgs (Max) | 10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.5 pF @ 3 V |
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