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2SK1828TE85LF

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2SK1828TE85LF

MOSFET N-CH 20V 50MA SC59

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage N-Channel MOSFET, part number 2SK1828TE85LF, is a surface-mount device in an SC-59 package. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 50mA at 25°C. The Rds On is specified at 40 Ohms maximum at 10mA and 2.5V Vgs, with a gate-source threshold voltage (Vgs(th)) of 1.5V maximum at 100µA. Input capacitance (Ciss) is a maximum of 5.5 pF at 3V. The device offers a maximum power dissipation of 200mW at 25°C and an operating junction temperature of 150°C. This MOSFET is suitable for applications in consumer electronics and general-purpose switching. The component is supplied in a Digi-Reel® package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ObsoletePackaging: Digi-Reel®
Technical Details:
PackagingDigi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Rds On (Max) @ Id, Vgs40Ohm @ 10mA, 2.5V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 100µA
Supplier Device PackageSC-59
Drive Voltage (Max Rds On, Min Rds On)2.5V
Vgs (Max)10V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds5.5 pF @ 3 V

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