2SJ377(TE16R1,NQ)
MOSFET P-CH 60V 5A PW-MOLDManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage P-Channel MOSFET, part number 2SJ377-TE16R1-NQ-. This surface mount device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 5A at 25°C. The Rds On is specified at a maximum of 190mOhms at 2.5A, 10V, with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 1mA. Key parameters include input capacitance (Ciss) of 630pF max at 10V and gate charge (Qg) of 22nC max at 10V. The component is rated for 20W power dissipation (Tc) and operates at junction temperatures up to 150°C. It is supplied in a TO-252-3, DPAK package, also known as PW-MOLD, on tape and reel. This MOSFET is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PW-MOLD |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
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