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2SJ360(TE12L,F)

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2SJ360(TE12L,F)

MOSFET P-CH 60V 1A PW-MINI

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage P-Channel Power MOSFET, part number 2SJ360-TE12L-F-. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 730mOhm at 500mA, 10V. With a maximum Gate-Source Voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2V at 1mA, this MOSFET offers flexible drive options. The high junction temperature rating of 150°C and a power dissipation of 500mW (Ta) are supported by its PW-MINI (TO-243AA) surface mount package. Key electrical characteristics include a Gate Charge (Qg) of 6.5 nC at 10V and an input capacitance (Ciss) of 155 pF at 10V. This component finds application in power management and switching circuits across various industrial and consumer electronics sectors. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs730mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackagePW-MINI
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 10 V

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