2SJ360(F)
MOSFET P-CH 60V 1A PW-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel Power MOSFET, part number 2SJ360-F-. This surface mount device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 730mOhm for an Id of 500mA and Vgs of 10V. Key parameters include Gate Charge (Qg) of 6.5nC at 10V and Input Capacitance (Ciss) of 155pF at 10V. With a maximum power dissipation of 500mW (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for applications in consumer electronics and industrial automation. The device is supplied in a PW-MINI (TO-243AA) package and is available in bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | PW-MINI |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 10 V |
Request a Quote
Clients Also Buy
TPHR7904PB,L1XHQ
MOSFET N-CH 40V 150A 8SOP
TK13A45D(STA4,Q,M)
MOSFET N-CH 450V 13A TO220SIS
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
