2SJ304(F)
MOSFET P-CH 60V 14A TO220NISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage P-Channel MOSFET (2SJ304-F-). This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 14A at 25°C (Ta). The Rds On is a maximum of 120mOhm at 7A, 10V. Key parameters include Gate Charge (Qg) of 45 nC @ 10 V and Input Capacitance (Ciss) of 1200 pF @ 10 V. The MOSFET is housed in a TO-220NIS package with a through-hole mounting type. Maximum power dissipation is 40W (Tc) with an operating junction temperature of 150°C. This component is suitable for applications in power supply and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220NIS |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 10 V |
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