2SJ168TE85LF
MOSFET P-CH 60V 200MA SC59Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number 2SJ168TE85LF, offers a 60V drain-source voltage and a continuous drain current of 200mA at 25°C. This device features a low on-resistance of 2 Ohms maximum at 50mA and 10V Vgs, with a Vgs(th) specified at -2V for 1mA. Packaged in an SC-59 (TO-236-3) surface-mount configuration and supplied on tape and reel, it is suitable for applications requiring efficient switching and low power dissipation, with a maximum power dissipation of 200mW (Ta). The input capacitance (Ciss) is 85pF maximum at 10V. This component is commonly utilized in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 10 V |
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