TRS8V65H,LQ
G3 SIC-SBD 650V 8A DFN8X8Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
Quality Control: Learn More
Diode 650 V 8A Surface Mount 4-DFN-EP (8x8)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 8 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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