TRS6E65C,S1AQ
DIODE SIL CARB 650V 6A TO220-2LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage TRS6E65C-S1AQ is a 650V, 6A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220-2L package, offers a forward voltage (Vf) of 1.7V at 6A and a reverse leakage current of 90 µA at 650V. It features a junction operating temperature up to 175°C (Max) and exhibits no measurable reverse recovery time above 500mA. The diode has a typical capacitance of 35pF at 650V and 1MHz. This SiC Schottky diode is suitable for applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 35pF @ 650V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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