TRS4E65H,S1Q
G3 SIC-SBD 650V 4A TO-220-2LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
Quality Control: Learn More
Diode 650 V 4A Through Hole TO-220-2L
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 263pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
| Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
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