TRS4A65F,S1Q
DIODE SIL CARBIDE 650V 4A TO220FManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
Quality Control: Learn More
Diode 650 V 4A Through Hole TO-220F-2L
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 16pF @ 650V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220F-2L |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 4 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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