TRS3E65H,S1Q
G3 SIC-SBD 650V 3A TO-220-2LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
Quality Control: Learn More
Diode 650 V 3A Through Hole TO-220-2L
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 199pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 3 A |
| Current - Reverse Leakage @ Vr | 45 µA @ 650 V |
Request a Quote
Clients Also Buy
CMH04(TE12L,Q,M)
DIODE GEN PURP 200V 1A M-FLAT
CRS01(TE85L)
DIODE SCHOTTKY 30V 1A SFLAT
CRS08(TE85L,Q,M)
DIODE SCHOTTKY 30V 1.5A S-FLAT
