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TRS12E65C,S1Q

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TRS12E65C,S1Q

DIODE SIL CARB 650V 12A TO220-2L

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single Diodes

Quality Control: Learn More

Toshiba Semiconductor and Storage TRS12E65C-S1Q is a Silicon Carbide (SiC) Schottky diode featuring a maximum repetitive peak reverse voltage of 650 V and an average rectified forward current of 12 A. This through-hole component, housed in a TO-220-2L package, exhibits a typical forward voltage drop of 1.7 V at 12 A and a reverse leakage current of 90 µA at 170 V. The diode offers a zero reverse recovery time for currents exceeding 500 mA, contributing to high-efficiency switching applications. Its junction operating temperature can reach up to 175°C (Max). The TRS12E65C-S1Q is commonly utilized in power supply units, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F65pF @ 650V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device PackageTO-220-2L
Operating Temperature - Junction175°C (Max)
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 12 A
Current - Reverse Leakage @ Vr90 µA @ 170 V

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