TRS12E65C,S1Q
DIODE SIL CARB 650V 12A TO220-2LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage TRS12E65C-S1Q is a Silicon Carbide (SiC) Schottky diode featuring a maximum repetitive peak reverse voltage of 650 V and an average rectified forward current of 12 A. This through-hole component, housed in a TO-220-2L package, exhibits a typical forward voltage drop of 1.7 V at 12 A and a reverse leakage current of 90 µA at 170 V. The diode offers a zero reverse recovery time for currents exceeding 500 mA, contributing to high-efficiency switching applications. Its junction operating temperature can reach up to 175°C (Max). The TRS12E65C-S1Q is commonly utilized in power supply units, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 16 week(s)Product Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 170 V |
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