TRS10E65C,S1Q
DIODE SIL CARB 650V 10A TO220-2LManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage TRS10E65C-S1Q, a Silicon Carbide (SiC) Schottky diode, offers superior performance for demanding applications. This through-hole component, housed in a TO-220-2L package, features a maximum DC reverse voltage of 650 V and an average rectified forward current capability of 10 A. Its maximum forward voltage drop at 10 A is 1.7 V. The device exhibits a low reverse leakage of 90 µA at 650 V and is characterized by its exceptional switching speed, indicated by a reverse recovery time of 0 ns, signifying no recovery time above 500 mA. The maximum junction operating temperature is 175°C. This SiC Schottky diode is suitable for power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
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