CUS10I40A(TE85L,QM
DIODE SCHOTTKY 40V 1A US-FLATManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage CUS10I40A-TE85L-QM is a Schottky barrier diode designed for efficient rectification. This component features a 40 V reverse voltage rating and a 1 A average rectified current capability. Its low forward voltage drop of 490 mV at 700 mA and a reverse leakage current of 60 µA at 40 V ensure high performance in power sensitive applications. The device exhibits a junction capacitance of 35 pF at 10 V and 1 MHz, contributing to its suitability for high-frequency operations. Packaged in the compact US-FLAT (SC-76, SOD-323) surface mount configuration and supplied on tape and reel, it is ideal for automated assembly. The CUS10I40A-TE85L-QM finds application in power supplies, voltage clamping, and reverse polarity protection circuits across various industrial and consumer electronics sectors. Its maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-76, SOD-323 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 35pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | US-FLAT (1.25x2.5) |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 490 mV @ 700 mA |
| Current - Reverse Leakage @ Vr | 60 µA @ 40 V |
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