CMG06(TE12L,Q,M)
DIODE GEN PURP 600V 1A M-FLATManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage CMG06-TE12L-Q-M- is a general-purpose diode designed for demanding applications. This surface mount component, utilizing an M-FLAT (2.4x3.8) package, offers a reverse voltage rating of 600V and an average rectified forward current of 1A. The device exhibits a low leakage current of 10 µA at 600V and a forward voltage drop of 1.1V at 1A. Operating across a junction temperature range of -40°C to 150°C, this diode features standard recovery speed exceeding 500ns. The CMG06-TE12L-Q-M- is commonly found in power supply units, industrial control systems, and general rectification circuits. Supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | M-FLAT (2.4x3.8) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
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