CMF01(TE12L,Q,M)
DIODE GEN PURP 600V 2A M-FLATManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage presents the CMF01-TE12L-Q-M-, a general-purpose diode designed for demanding applications. This surface-mount component, housed in an M-FLAT package (SOD-128, 2.4x3.8mm), offers a maximum DC reverse voltage of 600V and an average rectified current handling of 2A. It features a forward voltage drop of 2V at 2A and a reverse leakage of only 50 µA at 600V. The fast recovery time, rated at 100 ns, makes it suitable for power switching applications. Operating junction temperatures range from -40°C to 150°C. This diode is commonly employed in power supplies, automotive electronics, and industrial control systems. Packaged on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOD-128 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | M-FLAT (2.4x3.8) |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 600 V |
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