CLS03,LNITTOQ(O
DIODE SCHOTTKY 60V 10A L-FLATManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage CLS03-LNITTOQ-O is a Schottky diode designed for high-efficiency rectification. This component features a 60 V reverse voltage rating and a 10 A average rectified forward current capability. The forward voltage drop at 10 A is a low 580 mV, contributing to reduced power dissipation. Its fast recovery time, specified as <= 500 ns for currents > 200 mA, makes it suitable for switching applications. The device is housed in an L-FLAT™ package, measuring 4x5.5 mm, facilitating surface mount assembly. With a junction operating temperature range of -40°C to 125°C and a low reverse leakage of 1 mA at 60 V, the CLS03-LNITTOQ-O is well-suited for power supply units, automotive electronics, and industrial control systems. The capacitance at 10 V and 1 MHz is 345 pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | L-FLAT™ |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 345pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | L-FLAT™ (4x5.5) |
| Operating Temperature - Junction | -40°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 10 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 60 V |
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