CLS01,LFJFQ(O
DIODE SCHOTTKY 30V 10A L-FLATManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage CLS01-LFJFQ-O is a Schottky barrier diode designed for high-efficiency rectification. This component features a 30V reverse voltage rating and a 10A average rectified forward current capability. Its forward voltage drop is a low 470mV at 10A, contributing to reduced power dissipation. The device exhibits a reverse leakage current of 1mA at 30V. With a junction capacitance of 530pF at 10V and 1MHz, it is suitable for high-frequency applications, offering a fast recovery time. The CLS01-LFJFQ-O is housed in an L-FLAT™ (4x5.5) surface-mount package for robust assembly. Typical applications include power supplies, voltage clamping, and reverse polarity protection in industrial and automotive systems. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | L-FLAT™ |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | 530pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | L-FLAT™ (4x5.5) |
| Operating Temperature - Junction | -40°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 470 mV @ 10 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 30 V |
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