CES521,L3F
DIODE SCHOTTKY 30V 200MA ESCManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
Quality Control: Learn More
Toshiba Semiconductor and Storage's CES521-L3F is a Schottky barrier diode designed for small signal rectification. This component offers a 30V reverse voltage rating and a continuous average rectified current of 200mA. Featuring a low forward voltage drop of 500mV at 200mA, it minimizes power loss in high-frequency applications. The diode exhibits a reverse leakage current of 30 µA at 30V and a junction capacitance of 26pF at 0V and 1MHz, contributing to its high-speed switching capability. The CES521-L3F is supplied in an ESC (SOD-523) package for surface mounting, suitable for compact designs. Its operating junction temperature range extends up to 125°C. This diode is commonly utilized in power management circuits, signal processing, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-79, SOD-523 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 26pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | ESC |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 200 mA |
| Current - Reverse Leakage @ Vr | 30 µA @ 30 V |
Request a Quote
Clients Also Buy
CMF01A,LQ(M
DIODE GEN PURP 600V 2A M-FLAT
1SS367,H3F
DIODE SCHOTTKY 10V 100MA USC
CUS15I30A(TE85L,QM
DIODE SCHOTTKY 30V 1.5A US-FLAT
