1SS389,H3F
DIODE SCHOTTKY 40V 100MA ESCManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage 1SS389-H3F is a Schottky barrier diode designed for high-speed switching applications. This single diode features a reverse voltage rating of 40V and a maximum forward voltage drop of 600mV at 50mA. With an average rectified current of 100mA and a low reverse leakage of 5µA at 10V, it offers efficient rectification. The device operates within a junction temperature range of -40°C to 125°C.
The 1SS389-H3F is housed in an ESC (SC-79, SOD-523) package, suitable for surface mounting. Its capacitance is rated at 25pF at 0V and 1MHz. This component is commonly utilized in consumer electronics, telecommunications infrastructure, and industrial control systems where precise and rapid signal processing is critical. It is supplied in tape and reel packaging for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-79, SOD-523 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 25pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | ESC |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 50 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 10 V |
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