1SS250(TE85L,F)
DIODE GEN PURP 200V 100MA SC59Manufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage 1SS250-TE85L-F- is a general-purpose diode designed for high-speed switching applications. This component features a 200V reverse voltage rating and a 100mA forward rectified current capability. The SC-59 package (TO-236-3) facilitates surface mounting and is supplied on tape and reel for automated assembly. Key specifications include a forward voltage of 1.2V at 100mA and a reverse leakage current of 1µA at 200V. The diode exhibits a capacitance of 3pF at 0V and 1MHz, with a reverse recovery time of 60ns. This device is commonly utilized in consumer electronics, industrial controls, and telecommunications equipment requiring efficient signal rectification.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 3pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | SC-59 |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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