1SS193S,LF(D
DIODE GEN PURP 80V 100MA S-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single Diodes
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Toshiba Semiconductor and Storage 1SS193S-LF-D is a general-purpose diode designed for surface mount applications. This component features a maximum repetitive reverse voltage of 80V and an average rectified forward current of 100mA. It exhibits a low forward voltage drop of 1.2V at 100mA and a reverse leakage current of 500 nA at 80V. With a fast reverse recovery time of 4 ns, it is suitable for high-speed switching applications. The device is packaged in an S-Mini (TO-236-3, SC-59, SOT-23-3) package, supplied on tape and reel. Its capacitance at 0V and 1MHz is 3pF, and it operates at a maximum junction temperature of 125°C. This diode finds application in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 3pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | S-Mini |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
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